← Takaisin työpaikkoihin

Master's Thesis: Combined Thermal and Loss Modeling of high-performance Semiconductors

  • Paikan päällä
  • Ruotsi
  • Englanti
  • Julkaistu 06.10.26 19:47

At ABB, we help industries outrun - leaner and cleaner. Here, progress is an expectation - for you, your team, and the world. As a global market leader, we’ll give you what you need to make it happen. It won’t always be easy, growing takes grit. But at ABB, you’ll never run alone. Run what runs the world.

This Position reports to

R&D Team Lead

Your Role And Responsibilities

The growing adoption of DC systems, renewable energy integration, and DC distribution networks has increased the need for fast and reliable DC circuit breakers (DCCBs). At ABB Corporate Research in Västerås, several innovative DC interruption technologies have been successfully developed.

During fault interruption, semiconductor devices are exposed to high electrical and thermal stresses in a small timeframe which are often not sufficiently described in conventional datasheets of the devices. Accurate evaluation of semiconductor losses and temperature rise for breaker applications is therefore essential for the design of high-performance DC circuit breakers.

Since power losses generate heat and device characteristics vary with temperature, loss and thermal analyses must be considered together. Existing studies on DC breakers often neglect electro-thermal interactions, highlighting the need for more accurate coupled models under realistic operating and fault conditions.

This Master’s thesis investigates the combined thermal and loss modeling of semiconductor devices used in DC circuit breakers in a multi-physics COMSOL simulation. The objective is to accurately predict energy dissipation, and thermal stress during operation and fault interruption, thereby supporting the development of more efficient and reliable DC protection systems.

Details

Period: January - June 2027

Number of credits: 30 hp / ECTS

Number of students: 1

Location: Västerås

Tasks

Conduct a review of existing thermal and loss models for Si IGBTs and SiC Mosfets.Investigate the temperature dependency on electrical and thermal characteristics of semiconductor devices.Utilize simulation tools (e.g., Finite element tools like COMSOL, and circuit simulators) to model the thermal and conducting behavior of Si IGBTs and SiC Mosfets on a packaging level.Formulate a test plan to systematically study the simulation results on actual semiconductor devices.Set up an experimental test environment and perform laboratory experiments.Prepare a detailed report documenting all methodologies, findings, and conclusions. Possible publication.Optional extension:Investigate how different current waveforms impact the thermal behavior of the devices.

Preferred Background

Enrolled in a Master’s program in Electrical Engineering, Mechanical Engineering, Physics, or related fields. Experience in Finite Element tools like COSMOL and in electrical circuit simulation like PLECS or Simulink.’Familiarity with some semiconductor theory is advantageous.Analytical and structured with a curious mindset.Open-minded approach to both theoretical considerations and hands-on work in the laboratory.

More About Us In case you have questions, please contact Anna Huwyler, [email protected]

A future opportunity

This role is part of our talent pipeline, which means it’s not currently open, but we’re always looking for curious minds, bold thinkers, and people who want to make an impact.

Click Apply to express your interest and be considered for future opportunities that match your experience and aspirations.

At ABB, we welcome people from all backgrounds and believe that diverse perspectives help us build a cleaner, smarter future.

Apply today or visit https://www.abb.com to learn more about how we help run what runs the world.